Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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Low resistivity ohmic Pt/Ti contacts to p-type 4H-SiC

오옴성 접합에서의 낮은 접촉 저항을 갖는 Pt/Ti/P형 4H-SiC

  • Lee, J.H. (Information Technology Engineering, Soonchunhyang University) ;
  • Yang, S.J. (Information Technology Engineering, Soonchunhyang University) ;
  • Kim, C.K. (Information Technology Engineering, Soonchunhyang University) ;
  • Cho, N.I. (Electronic Engineering, Sun Moon University) ;
  • Jung, K.H. (Electronic Engineering, Sun Moon University) ;
  • Shin, M.S. (Electronic Engineering, Sun Moon University)
  • 이주헌 (순천향대학교 정보기술공학부) ;
  • 양성준 (순천향대학교 정보기술공학부) ;
  • 김창교 (순천향대학교 정보기술공학부) ;
  • 조남인 (선문대학교 전자공학과) ;
  • 정경화 (선문대학교 전자공학과) ;
  • 신명섭 (선문대학교 전자공학과)
  • Published : 2001.07.18
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Abstract

Ohmic contacts have been fabricated on p-type 4H-SiC using Pt/Ti. Low resistivitf Ohmic contacts of Pt/Ti to p-type 4H-SiC were investigated. Specific contact resistances were measured using the transmission line model method, and the physical properties of the contacts were examined using x-ray diffraction, scanning electron microscopy. Ohmic behavior with linear current-voltage characteristics was observed following anneals at $900^{\circ}C$ for 90sec at a pressure of $3.4{\times}10^{-5}$ Torr. The Pt/Si/Ti films was measured lower value of the specific contact resistance by the annealing process, and the contact resistances were improved more than one order compared to Ti contact the annealed sample. Scanning electron microscopy shows that the Pt layer effectively reduce the oxidation of Ti films. And results are obtained as $4.6{\times}10^{-4}$ ohm/$cm^2$ for a Pt/Ti metal structure after a vacuum annealing at $900^{\circ}C$ for 90sec. Titanium has a relatively high melting point, thus Ti-based metal contacts were attempted in this study.

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