Characteristics of metal thin-film pressure sensors by on silicon thin-film mer

실리콘 박막 멤브레인상에 제작된 금속박막형 압력센서의 특성

  • 최성규 (영남대학교 전자공학과) ;
  • 남효덕 (영남대학교 전자공학) ;
  • 정귀상 (동서대학교 정보시스템공학부)
  • Published : 2001.07.18

Abstract

This paper describes fabrication and characteristics of metal thin-film pressure sensor for working at high temperature. The proposed pressure sensor consists of a chrom thin-film, patterned on a Wheatstone bridge configuration, sputter-deposited onto thermally oxidized Si membranes with an aluminium interconnection layer. The fabricated pressure sensor presents a low temperature coefficient of resistance, high-sensitivity, low non-linearity and excellent temperature stability. The sensitivity is 1.097 $\sim$ 1.21 mV/V kgf/$cm^2$ in the temperature range of 25 $\sim$ $200^{\circ}C$ and the maximum non-linearity is 0.43 %FS.

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