한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2000년도 영호남학술대회 논문집
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- Pages.171-174
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- 2000
CMP공정에 의한 실리케이트 산화막의 오염 최소화
Minimum Pollution of Silicate Oxide in the CMP Process
- Lee, Woo-Sun (School of Electrical and Control Measurement, Chosun University) ;
- Kim, Sang-Yang (Anam Semiconductor) ;
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Choi, Gun-Woo
(School of Electrical and Control Measurement, Chosun University) ;
- Cho, Jun-Ho (School of Electrical and Control Measurement, Chosun University)
- 발행 : 2000.05.13
초록
We have investigated the CMP slurry properties of silicate oxide thin films surface on CMP cleaning process. The metallic contaminations by CMP slurry were evaluated in four different oxide films, such as plasma enhanced tetra-ethyl-ortho-silicate glass(PE-TEOS),
키워드