한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)

한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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Poly(3-alkylthiophene) 전계발광소자에 도입된 alkyl side chain의 길이에 따른 발광특성

Emitting characteristics with alkyl side chain introduced at poly(3-alkylthiophene) electroluminescent devices

  • 서부완 (전남 대학교 전기공학과) ;
  • 김주승 (전남 대학교 전기공학과) ;
  • 구할본 (전남 대학교 전기공학과)
  • 발행 : 2000.04.28
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초록

We studied effects of alkyl($C_nH_{2n+1}$) chain length on characteristics of poly(3-alkylthiophene) electroluminescent diodes. Among the poly(3-alkylthiophene), poly(3-hexylthiophene)(n=6) and poly(3- octyIthiophene)(n=8) were mainly used for the emitting layer of the diode. The result of experiment, the emission intensity of poly(3-alkylthiophene) electroluminescent diodes depends on the alkyl chain length. Strong emission is obtained from a poly(3-alkylthiophene) diodes of long alkyl side chain length. Emission intensities are enhanced by a confinement of carriers on a main chain with a long interchain distance caused by a long alkyl side chain.

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