Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2000.04b
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- Pages.112-116
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- 2000
Selective Etching of Silicon in TMAH:IPA:Pyrazine Solutions
TMAH:IPA:Pyrazine 용액에서 실리콘의 선택식각
Abstract
This paper presents anisotropic ethcing characteristics of single-crystal silicon in tetramethylammonium hydroxide(TMAH):isopropyl alcohol(IPA) solutions containing pyrazine. With the addition of IPA to TMAH solutions, etching characteristics are exhibited that indicate an improvement in flatness on the etching front and a reduction in undercutting, but the etch rate on (100) silicon is decreased. The (100) silicon etch rate is improved by the addition of pyrazine. An etch rate on (100) silicon of