한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2000년도 춘계학술대회 논문집 전자세라믹스 센서 및 박막재료 반도체재료 일렉트렛트 및 응용기술
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- Pages.96-99
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- 2000
PVK/P3DoDT 블랜드를 발광층으로 사용한 EL 소자의 발광효율 향상에 관한 연구
Improvement of external quantum efficiency of EL devices with PVK/P3DoDT blends using as a emitting layer
- 발행 : 2000.04.28
초록
We fabricated electroluminescent(EL) devices which have a blended single emitting layer containing poly(N-vinylcarbazole)[PVK] and poly(3-dodecylthiophene)[P3DoDT]. The molar ratio between P3DoDT and PVK changed with 1:0, 2:1 and 1:1. To improve the external quantum efficiency of EL devices, we applied insulating layer, LiF layer, between polymer emitting layer and Al electrode. All of the devices emit orange-red light and its can be explained that the energy transfer occurs from PVK to P3DoDT. In the voltage-current and voltage-light power characteristics of devices applied LiF layer, current and light power drastically increased with increasing applied voltage. In the consequence of the result, the external quantum efficiency of the devices that have a molar ratio 1:1 with LiF layer was 35 times larger than that of the device without LiF layer at 6V.
키워드