한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)

한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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도전성 ${\beta}-SiC-TiB_2$ 복합체의 특성

Properties of Electro-Conductive SiC-TiB2 Composites

  • 신용덕 (원광대학교 공과대학 전기전자공학부) ;
  • 박미림 (원광대학교 공과대학 전기전자공학부) ;
  • 송준태 (성균관대학교 공과대학 전기전자 및 컴퓨터공학부) ;
  • 임승혁 (성균관대학교 공과대학 전기전자 및 컴퓨터공학부)
  • Shin, Yong-Deok (School of Electrical and Electronic Engineering, WonKwang University) ;
  • Park, Mi-Lim (School of Electrical and Electronic Engineering, WonKwang University) ;
  • Song, Joon-Tae (School of Electrical and Computer Engineering, Sung Kyun Kwan University) ;
  • Yim, Seung-Hyuk (School of Electrical and Computer Engineering, Sung Kyun Kwan University)
  • 발행 : 2000.04.28
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초록

The effect of $Al_2O_3+Y_2O_3$ additives on fracture toughness of ${\beta}-SiC-TiB_2$ composites by hot-pressed sintering were investigated, The ${\beta}-SiC-TiB_2$ ceramic composites were hot-presse sintered and annealed by adding 4, 8, 12wt% $Al_2O_3+Y_2O_3$(6 : 4wt%) powder as a liquid forming additives at low temperature($1800^{\circ}C$) for 4h. In this microstructures, the relative density is over 97% of the theoretical density and the porosity increased with increasing $Al_2O_3+Y_2O_3$ contents because of the increasing tendency of pore formation. But the fracture toughness showed the highest of $7.0MPa{\cdot}m^{1/2}$ for composites added with 12wt% $Al_2O_3+Y_2O_3$ additives at room temperature. The electrical resistivity showed the lowest of $1.59\times10^{-3}\Omega{\cdot}cm$ for composite added with 8wt% $Al_2O_3+Y_2O_3$ additives at room temperature and is all positive temperature coefficient resistance(PTCR} against temperature up to $700^{\circ}C$.

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