Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
권호 표지

Emission Properties of ZnO Grown by PLD

PLD로 증착한 ZnO 박막의 발광 특성 분석

  • Bae, Sang-Hyuck (Department of Electrical and Electronic Engineering, Yonsei University) ;
  • Lee, Sang-Yeol (Department of Electrical and Electronic Engineering, Yonsei University)
  • 배상혁 (연세대학교 전기전자공학과) ;
  • 이상렬 (연세대학교 전기전자공학과)
  • Published : 2000.11.25
Download PDF
⟨ Previous Next ⟩

Abstract

ZnO thin films for light emission device have been deposited on sapphire and silicon substrates by pulsed laser deposition technique(PLD). A Nd:YAG laser was used with the wavelength of 355 nm. In order to investigate the emission properties of ZnO thin films, PL measurements with an Ar ion laser as a light source using an excitation wavelength of 351 nm and a power of 100 mW are used. All spectra were taken at room temperature by using a grating spectrometer and a photomultiplier detector. ZnO exhibited PL bands centered around 390, 510 and 640 nm, labeled near ultra-violet (UV), green and orange bands. Structural properties of ZnO thin films are analized with X-ray diffraction (XRD).

Keywords