Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 2000.11d
- /
- Pages.754-757
- /
- 2000
Development of a real time neutron Dosimeter using semiconductor
반도체형 실시간 전자적 선량계 개발
- Lee, Seung-Min (Dept. of Electrical Eng, Chungnam National Univ.) ;
- Lee, Heung-Ho (Dept. of Electrical Eng, Chungnam National Univ.) ;
-
Lee, Nam-Ho
(Korea Atomic Energy Research Institute) ;
-
Kim, Seung-Ho
(Korea Atomic Energy Research Institute) ;
- Yeo, Jin-Gi (Dept. of Electrical Eng, Chungnam National Univ.)
- Published : 2000.11.25
Abstract
Si PIN diodes are subject to be damaged from the exposure of fast neutron by displacement of Si lattice structure. The defects are effective recombination centers for carriers which migrate through the base region of the PIN diode when forward voltage is applied. It causes an increase in current and a decrease in resistivity of the diode. This paper presents the development of a neutron sensor based on displacement damage effect. PIN diodes having various structures were made by micro-fabrication process, and neutron beam test was performed to identify neutron damage effect to the diode. From a result of the test, it was shown that the forward voltage drop of the diode, at a constant current, has good linearity for neutron dosage. Also it was found that the newton dosage can be measured by the pin diode neutron dosimeter with constant current power.
Keywords