Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2000.11a
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- Pages.519-523
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- 2000
RF power dependence on field emission property from carbon thin film grown by PECVD
PECVD에 의해 작성된 탄소계 박막의 전계전자방출특성에 대한 RF power 의존성에 관한 연구
Abstract
Using plasma-enhanced chemical vapor deposition (PECVD), carbon thin film as electron field emitter were fabricated. These carbon thin film were deposited on Si(100) substrate at several RF power. These film were estimated by raman spectroscopy, scanning electron microscopy, and field emission. The field electron emission property of these carbon thin film was estimated by a diode technique. As the result, we observed that the field emission properties of these films were promoted by higher RF power. These results are explained as change of surface morphology and structural properties of carbon thin film