대한전자공학회:학술대회논문집 (Proceedings of the IEEK Conference)
- 대한전자공학회 2000년도 추계종합학술대회 논문집(2)
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- Pages.325-328
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- 2000
DRAM의 Refresh 시간 개선을 위한 불순물 농도 최적화에 관한 연구
The Study on Impurity Concentration Optimizing for the Refresh Time Improvement of DRAM
- Lee Yong-Hui (Hyundai Electronics Industries Co., Ltd.) ;
- Woo Kyong-Hwan (Woosong Technical College) ;
- Yi Cheon Hee (Cheong Ju University)
- 발행 : 2000.11.01
초록
The control of the data retention time is a main issue for realizing future high density dynamic random access memory. In this paper, we propose the new implantation scheme by gate-related ion beam shadowing effect and buffer-enhanced
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