대한전자공학회:학술대회논문집 (Proceedings of the IEEK Conference)

대한전자공학회 (The Institute of Electronics and Information Engineers)
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붕소 이온주입에 의한 $p^{+}n$ 접합 다이오드에 관한 연구

A study on $P^{+}N$ junction diode by boron implantation

  • 발행 : 2000.11.01
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초록

In this paper, we demonstrated an analytical description method of forward voltage drop and reverse voltage of $P^{+}N$ junction diode with <111> oriented antimony doped silicon wafer 60keV boron implantation computer simulation results. In order to make electrical activation of implanted carriers, thermal annealing are carried out by RTP method for 1min at $1000^{\circ}C$ inert gas condition.

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