Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)
- 2000.11b
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- Pages.221-224
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- 2000
Formations and properties of MFIS structure using $LiNbO_3/Si_3N_4$ structure
$LiNbO_3/Si_3N_4$ 구조를 이용한 MFIS 구조의 형성 및 특성
Abstract
We have successfully demonstrated metal-ferroel-ectric-insulator-semiconductor (MFIS) devices using Al/LiNbO
Keywords