Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Study of Improvement of Gate Oxide Quality by Using an Advanced, $TiSi_2$ process & STI

새로운 $TiSi_2$ 형성방법과 STI를 이용한 초박막 게이트 산화막의 특성 개선 연구

  • 엄금용 (건국대학교 전자.정보통신공학과) ;
  • 오환술 (건국대학교 전자.정보통신공학과)
  • Published : 2000.11.01
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Abstract

Ultra large scale integrated circuit(ULSI) & complementary metal oxide semiconductor(CMOS) circuits require gate electrode materials such as meta] silicides, titanium-silicide for gate oxides. Many previous authors have researched the improvements sub-micron gate oxide quality. However, little has been done on the electrical quality and reliability of ultra thin gates. In this research, we recommend novel shallow trench isolation structure and two step TiSi$_{2}$ formation for sub 0.1${\mu}{\textrm}{m}$ gate oxide.

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