대한전자공학회:학술대회논문집 (Proceedings of the IEEK Conference)

대한전자공학회 (The Institute of Electronics and Information Engineers)
권호 표지

단파장 응용을 위한 InGaP/GaAs HPT의 광특성

Optical Characteristics of InGaP/GaAs HPT for Short-wavelength Applications

  • 이상훈 (동아대학교 전기전자컴퓨터공학부) ;
  • 박재홍 (동아대학교 전기전자컴퓨터공학부) ;
  • 송정근 (동아대학교 전기전자컴퓨터공학부) ;
  • 홍창희 (동아대학교 전기전자컴퓨터공학부) ;
  • 김용규 (대구기능대학 메카트로닉스과)
  • 발행 : 2000.11.01
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초록

This paper shows the high performance as a photodetector of InGaP/GaAs HPT with 3-terminal caused by its inherent good electrical properties compared with AIGaAs/GaAs HPT. InGaP/GaAs HPT produced the high optical gain of about 61 where HPT is biased at Vc=3V, Iв=2${\mu}\textrm{A}$ with an input optical power of 1.23㎼. This is 2.5 times higher than that of AIGaAs/GaAs HPT. And we examined that the optical gain of HPTs becomes larger when operating in 3-terminal configuration rather than 2-terminal with the floating base. for a given base current of 2${\mu}\textrm{A}$, the optical gain is enhanced about 18% in the InGaP/GaAs HPT and about 27% in the AIGaAs/GaAs HPT over that of the 2-terminal device.

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