Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)
- 2000.06b
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- Pages.56-59
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- 2000
A study on Ultrashallow PN junction formation by boron implantation in Silicon
실리콘에 Boron 이온 주입에 의한 Ultrashallow PN접합 형성에 관한 연구
Abstract
In this paper, we have made a comparison between secondary ion mass spectroscopy(SIMS) data by the 5kcV-15keV boron implantation and computer simulation results. In order to make electrical activation of implanted carriers, thermal annealing are carried out by RTP method for 30s at 1000
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