Low temperature epitaxial growth of 4H-SiC thin films by chemical vapor deposition using bis-trimethylsilylmethane precursor

  • Jeong, Jae-Kyeong (School of Materials Science and Engineering, Seoul National University) ;
  • Na, Hoon-Joo (School of Materials Science and Engineering, Seoul National University) ;
  • Um, Myung-Yoon (School of Materials Science and Engineering, Seoul National University) ;
  • Kim, Bum-Seok (School of Materials Science and Engineering, Seoul National University) ;
  • Kim, Hyeong-Joon (School of Materials Science and Engineering, Seoul National University)
  • 발행 : 2000.11.01