메모리 소자 응용을 위한 펄스 레이저 증착법으로 제작된 PLT박막의 열처리 효과 연구

Effect of grain size of Pb(La,Ti)O$_3$thin films grown by pulsed laser deposition for memory device application

  • 허창회 (연세대학교 전기컴퓨터공학과) ;
  • 심경석 (연세대학교 전기컴퓨터공학과) ;
  • 이상렬 (연세대학교 전기컴퓨터공학과)
  • 발행 : 2000.07.01

초록

Ferroelectric thin film capacitors with high dielectric constant are important for the application of memory devices. In this work, thin films of PLT(28)(Pb$\sub$0.72/La$\sub$0.28/Ti$\sub$0.93/O$_3$) were fabricated on Pt/Ti/SiO$_2$/Si substrates in-situ annealing and ex-situ annealing have been compared depending on the annealing time. We have systematically investigated the variation of grain sizes depending on the condition of post-annealing and the variation of deposition rate. C-V measurement, ferroelectric properties, leakage current and SEM were performed to investigate the electrical properties and the microstructural properties of Pb(La,Ti)O$_3$.

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