RF-magnetron sputtering 법을 이용한 개스 센서용 $\alpha$-$Fe_{2}O_{3}$박막의 제조 및 특성

Fabrication and Properties of $\alpha$-$Fe_{2}O_{3}$Thin Films Prepared by RF-magnetron sputtering method

  • 최진영 (충북대학교 재료공학과) ;
  • 장건익 (충북대학교 재료공학과)
  • 발행 : 2000.07.01

초록

In this study, $\alpha$-Fe$_2$O$_3$thin films were deposited on $Al_2$O$_3$substrate by RF magnetron sputtering method from a $\alpha$-Fe$_2$O$_3$target(99.9%). The sputtering atmosphere was Ar and 80%Ar:20%O$_2$mixture in a total gas pressure of 1~3mTorr. As-deposited $\alpha$-Fe$_2$O$_3$thin films were heated to 300, 400, 500, $600^{\circ}C$ for 5hr in oxygen atmosphere. The structure and the morphology of $\alpha$-Fe$_2$O$_3$thin films were examined by scanning Electron microscopy(SEM) and the crystal structure was analyzed by X-Ray Diffractometer(XRD). The microstructure of the annealed $\alpha$-Fe$_2$O$_3$films exhibits rather gross particle and the grain size was less than 100nm. Since the grain size was very small, the gas sensitivity was expected to be improved.

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