한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)

한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지

대향타겟식 스퍼터법으로 제작된 AIN 박막의 결정학적 특성

Crystallographic properties of AIN thin film prepared by lacing targets sputtering method

  • 양진석 (경원대학교 공대 전기전자공학부) ;
  • 금민종 (경원대학교 공대 전기전자공학부) ;
  • 손인환 (신성대학 전기과) ;
  • 최형욱 (경원대학교 공대 전기전자공학부) ;
  • 김경환 (경원대학교 공대 전기전자공학부)
  • 발행 : 2000.07.01
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초록

AIN thin films have been prepared by reactive sputtering method, using facing targets sputtering system with a DC power supply which can deposit a high quality thin film and control deposition condition in all range of nitrogen. The crystallographic characteristics of AIN thin films on N$_2$/Ar ratio was investigated by alpha-step and X-ray diffraction. As a result, the AIN film deposited at the pressure ratio of the nitrogen of 30% revealed strong X-ray diffraction intensity under substrate temperature 25$^{\circ}C$ and applied current 0.4A.

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