Orientation Characteristics of AIN Thin Film using RF Magnetron Sputtering wish Incident Angle

입사각을 가진 RF 마그네트론 스퍼터링법으로 증착한 AIN 박막의 배향 특성

Reactive radio frequency (RF)magnetron sputter with incident angle has been used to deposit AlN thin film on a crystalline Si substrate. (002)Preferred orientation of AlN thin film has been obtained at low sputtering pressure. Also it has been shown that depostion rate of AIN thin film is affected by fraction Ar and $N_2$ partial pressure. But substrate temperature didn't affect depostion rate of AIN thin film . As sputtering pressure increased preferred orientation degraded. The internal stress changed from tensile stress to compressive stress as fraction of $N_2$ partial pressure increased. At low nitrogen partial pressure cermet$^{[1]}$ AIN thin film is obtained.