$CeO_2$첨가에 따른 YBCO고온초전도 후막의 특성

Characterization Of YBCO HTSC-Thick film With addiction of $CeO_2$

  • 윤기웅 (전북대학교 전자정보공학부) ;
  • 임성훈 (전북대학교 전자정보공학부) ;
  • 홍세은 (전북대학교 전자정보공학부) ;
  • 강형곤 (전북대학교 전자정보공학부) ;
  • 한용희 (한전전력산업구조조정실) ;
  • 한병성 (전북대학교 전자정보공학부)
  • 발행 : 2000.07.01

초록

To fabricate YBa$_2$Cu$_3$O$_{x}$ thick film using diffusion process, $Y_2$BaCuO$_{5}$ and BaO+CuO as the material of substrate and the doping material were selected. CeO$_2$ in the doping material was mixed. As another doping material, YBa$_2$Cu$_3$O$_{x}$ was prepared for the comparison with BaO+CuO doping material. Each doping material was patterned on $Y_2$BaCuO$_{5}$ substrate by the screen printing method and then was annealed above peritectic reaction temperature of YBCO with a few step. It could be observed by X-ray diffraction patterns and SEM photographs that through the diffusion process of the $Y_2$BaCuO$_{5}$ and BaO+CuO, the YBa$_2$Cu$_3$O$_{x}$ phase was formed. With an amout of addition of CeO$_2$, the thickness of a formed YBa$_2$Cu$_3$O$_{x}$ decreased. x/ decreased.

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