한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)

한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지

Epitaxial Growth of BSCCO Thin film Fabricated by Layer-by-layer Sputtering

  • Yang, Sung-Ho (Dept.of Electric Electronics Engineering, Dongshin University) ;
  • Park, Yong-Pil (Dept.of Electric Electronics Engineering, Dongshin University) ;
  • Lee, Hee-Kab (Dept.of Electric Electronics Engineering, Dongshin University)
  • 발행 : 2000.07.01
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초록

Bi$_2$Sr$_2$CuO$_{x}$(Bi-2201) thin films have been fabricated by atomic layer-by-layer deposition using ion beam sputtering(IBS) process. During the deposition, 14 wt%-ozone/oxygen mixture gas of typical pressure of 5.0$\times$10$^{-5}$ Torr is supplied with ultraviolet light irradiation for oxidation. XRD and RHEED investigations reveal that a buffer layer with compositions different from Bi-2201 is formed at the early deposition stage of less than 10 units cell and then Bi-2201 oriented along the c-axis is grown.n.

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