프렉탈 처리를 이용한 BST 박막의 구조 및 유전적특성

The Structure and Dielectric Properties of BST Thin Films Using Fractal Process

  • 기현철 (전남대학교 전기공학과) ;
  • 박지순 (전남대학교 전기공학과) ;
  • 이우기 (목포대학교 제어계측공학과) ;
  • 민용기 (광주대학교 전자통신컴퓨터공학과) ;
  • 김태성 (전남대학교 전기공학과)
  • 발행 : 2000.07.01

초록

In this study, (Ba, Sr)$TiO_3$ (BST) ceramics thin films were prepared by Sol-Gel method. BST solution was made and spin-coated on Pt/$TiO_2$/Si substrate at 4000 [rpm] for 10 seconds. Coated specimens were dried at 150[$^{\circ}C$] for 5 minutes. Coating process was repeated 3 times and then sintered at 750[$^{\circ}C$] for 30 minutes. Structure and electrical characteristics of specimen was analyzed by Fractal Process. Thickness of BST ceramics thin films are about 2800[$\AA$]. Dielectric constant and loss of thin films was little decreased at 1[kHz]~1[MHz]. Dielectric constant and loss to frequency were 250 and 0.02 in BST3. The property of leakage current as the relation between the current and the voltage was that change of the leakage current was stable when the applied voltage was 0~3[V].

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