Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)
- 2000.02a
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- Pages.212-212
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- 2000
Growth of vertically aligned carbon nanotubes on a large area Si substrates by thermal chemical vapor deposition
- Lee, Cheol-Jin (School of Electrical Engineering, Kunsan national Univ) ;
- Park, Jung-Hoon (School of Electrical Engineering, Kunsan national Univ) ;
- Son, Kwon-Hee (School of Electrical Engineering, Kunsan national Univ) ;
- Kim, Dae-Woon (School of Electrical Engineering, Kunsan national Univ) ;
- Lyu, Seung-Chul (School of Electrical Engineering, Kunsan national Univ) ;
- Park, Sung-Hoon (School of Electrical Engineering, Kunsan national Univ)
- Published : 2000.02.01
Abstract
Since the first obserbvation of carbon nanotubes, extensive researches have been done for the synthesis using arc discharge, laser vaporization, and plasma-enhanced chemical vapor deposition. Carbon nanotubes have unique physical and chemical properties and can allow nanoscale devices. Vertically aligned carbon nanotubes with high quality on a large area is particularly important to enable both fundamental studies and applications, such as flat panel displays and vacuum microelectronics. we have grown vertically aligned carbon nanotubes on a large area of Si substrates by thermal chemical vapor deposition using C2H2 gas at 750-950
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