Characteristics of AlNd thin film for TFT-LCD bus line

Recently low resistance of bus line is required for large screen size TFT-LCD panels. As a result, lower resistance Al-alloy is currently reviewed extensively. The resistivity is required smaller than 10 $\mu$$\Omega$cm. In this paper, Al-Nd thin film were deposited on glass substrates by D.C. magnetron sputtering system under various condition. Its properties were characterized by SEM, AFM, XRD, 4-ping-probe. The optimal condition of Al-Nd was 12$0^{\circ}C$, 125W, 0.4Pa, 30sccm(Ar) and 35$0^{\circ}C$, 20min. annealing. At that condition the resistivity of Al-Nd(2wt.%) was about 4 $\mu$$\Omega$cm. The minimum contact resistance of ITO/Nd was about 110$\mu$$\Omega$cm in the condition of 30$0^{\circ}C$, Ar 30 sccm. O2.