Improvement of Schottky Characteristic for GaN Devices

GaN 소자의 Schottky특성 향상에 관한 연구

A Schottky characteristic is one of the important properties to determine the performance of GaN electronic devices. In this paper, we have studied how to improve the property after n$^{+}$ layer etching by ICP(Induced Coupled Plasma)-RIE(Reactive ion Etching). We have tried $N_2$radiation, annealing after $N_2$radiation, and annealing in $N_2$environment. We have found that a simple annealing method in $N_2$environment is enough to improve the Schottky characteristic for electronic device-Quality application.n.