Fabrication and Characterization of Power AlGaAs/InGaAs double channel P-HEMTs for PCS applications

PCS용 전력 AlGaAs/InGaAs 이중 채널 P-HEMTs의 제작과 특성

  • 이진혁 (포항공과대학교 전자전기공학과 전자파특화센터) ;
  • 김우석 (포항공과대학교 전자전기공학과 전자파특화센터) ;
  • 정윤하 (포항공과대학교 전자전기공학과 전자파특화센터)
  • Published : 1999.11.01

Abstract

AlGaAs/InGaAs power P-HEMTS (Pseudo-morphic High Electron Mobility Transistors) with 1.0-${\mu}{\textrm}{m}$ gate length for PCS applications have been fabricated. We adopted single heterojunction P-HEMT structure with two Si-delta doped layer to obtain higher current density. It exhibits a maximum current density of 512㎃/mm, an extrinsic transconductance of 259mS/mm, and a gate to drain breakdown voltage of 12.0V, respectively. The device exhibits a power density of 657㎽/mm, a maximum power added efficiency of 42.1%, a linear power gain of 9.85㏈ respectively at a drain bias of 6.0V, gate bias of 0.6V and an operation frequency of 1.765㎓.

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