대한전자공학회:학술대회논문집 (Proceedings of the IEEK Conference)
- 대한전자공학회 1999년도 추계종합학술대회 논문집
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- Pages.191-194
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- 1999
강유전박막의 피로현상을 고려한 MFSFET 소자의 특성
Device Characteristics of MFSFET with the Fatigue of the Ferroelectric Thin Film
초록
Switching behaviour of the ferroelectric thin film and device characteristics of the MFSFET (Metal-Ferroelectric-Semiconductor FET) are simulated with taking into account the accumulation of oxygen vacancies near interface between the ferroelectric thin film and the bottom electrode caused by the progress of fatigue. We show net switching current decreases due fatigue in the switching model. It indicates that oxygen vacancy strongly suppresses polarization reversal. The difference of saturation drain current of the device before fatigue is shown by the dual threshold voltages in I
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