Fabrication of wide-head T-gate with 0.2 ${\mu}{\textrm}{m}$ gate length using E-beam lithography for MIMIC applications.

전자선 묘화를 이용한 0.2 ${\mu}{\textrm}{m}$의 게이트 길이를 갖는 MIMIC용 Wide-Head T-gate 제작

We have developed fabrication processes that form a wide-head T-gate with a 0.2 ${\mu}{\textrm}{m}$ gate length using the combination of thickness of each PMMA layer, line doses and development times for applications in millimeter- and micro-waves monolithic integrated circuits. The three-layer resist structure (PMMA/P(MMA-MAA)/PMMA = 1800 $\AA$/5800 A/1900$\AA$), 4nC/cm and over development were used for fabrication of a wide-head T-gate by the conventional double E-beam exposure technology. The experimented results show that the cross sectional area of T-gate fabricated by the proposed method is easily enlarged without additional processes.