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Analysis of Thermal Stresses Developed in Bonding Interface of Semiconductor Chip

This paper deals with the stress singularity induced at the interface corner between the viscoelastic thin film and the rigid substrate subjected to uniform temperature change. The viscoelastic film has been assumed to be thermorheologically simple. The time-domain boundary element method(BEM) has been employed to investigate the behavior of interface stresses. The order of the free-edge singularity has been obtained numerically for a given viscoelastic model. It is shown that the free-edge stress intensity factor is relaxed with time, while the order of the singularity increases with time for the viscoelastic model considered.