대한전자공학회:학술대회논문집 (Proceedings of the IEEK Conference)
- 대한전자공학회 1999년도 하계종합학술대회 논문집
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- Pages.279-282
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- 1999
MOCVD 방식으로 증착한 Cu 박막의 Electromigration 특성
Characteristics of electromigration in Cu thin films deposited by MOCVD method
초록
Acceleration in integration density and speed performance of ULSI circuits require miniaturization of CMOS and interconnections as well as higher current density capabilities for transistors. A leading candidate to substitute A1-alloy is Cu, which has lower resistivity and higher melting point. So we can expect much higher electromigration resistance. In this paper, we are going to explain the major features of EM for MOCVD Cu according to variant conditions. We compared the life time and activation energy of MOCVD Cu with those of E-beam Cu and Al in The same conditions.
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