Simulations of Capacitive Cross-talk Effects on TFT-LCD Operational Characteristics

TFT-LCD 특성에 미치는 Capacitive Cross-talk의 영향에 대한 시뮬레이션

  • 윤영준 (홍익대학교 전자전기 공학부) ;
  • 정순신 (홍익대학교 전자전기 공학부) ;
  • 김태형 (홍익대학교 전자전기 공학부) ;
  • 최종선 (홍익대학교 전자전기 공학부)
  • Published : 1999.11.01

Abstract

The design of large area thin film transistor liquid crystal displays (TFT-LCDs) requires consideration of cross-talks between the data lines and pixel electrodes. These limits are imposed by the parasitic capacitive elements present in a pixel. The capacitive coupling of the data line signal onto the pixel causes a pixel voltage error. In this study semi-empirical capacitance model which is adopted from VLSI interconnection capacitance calculations was used to calculate mutual coupling capacitances. With calculated mutual coupling capacitances and given image pattern, the root mean square(RMS) voltage of pixel is calculated to see vertical cross-talk from the first to the last column. The information obtained from this study could be utilized to design the larger area and finer image quality panel.

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