한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)

한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지

RTA를 이용한 후열처리가 PZT 박막의 강유전 특성에 미치는 영향

The effect of rapid thermal annealing treatment for ferroelectric properties of PZT thin films

  • 주필연 (성균관대학교 전기전자 및 컴퓨터공학부) ;
  • 박영 (성균관대학교 전기전자 및 컴퓨터공학부) ;
  • 정규원 (성균관대학교 전기전자 및 컴퓨터공학부) ;
  • 임동건 (성균관대학교 전기전자 및 컴퓨터공학부) ;
  • 송준태 (성균관대학교 전기전자 및 컴퓨터공학부)
  • 발행 : 1999.11.01
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초록

The post-annealing treatments on RF (Radio Frequency) magnetron sputtered PZI(Pb$\_$1.05/(Zr$\_$0.52/, Ti$\_$0.48/)O$_3$thin films(4000${\AA}$) have been investigated. for a structure of PZT/Pt/Ti/SiO$_2$/Si Crystallization pproperties of PZT films were strongly dependent on RTA(Rapid Thermal Annealing) annealing temperature. We were able to obtain a perovskite structure of PZT at a low temperature of 600$^{\circ}C$. P-E curves of Pd/PZT/Pt capacitor annealed at 700$^{\circ}C$ demonstrate typical hysteresis loops. The measured values of P$\_$r/, E$\_$c/, by post annealed at 700$^{\circ}C$ were 12.1 ${\mu}$C/$\textrm{cm}^2$, 120KV/cm respectively.

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