한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 1999년도 추계학술대회 논문집
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- Pages.44-48
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- 1999
MOSFET에서 gate oxide의 직류 절연파괴 특성
The DC Breakdown Properties of Gate Oxide in MOSFET
초록
In order to the investigate for the DC(forward-reverse) breakdown properties of gate oxide in MOSFET, we are manufactured the specimen as following. The resistivity is 1.2(
키워드