한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 1999년도 추계학술대회 논문집
- /
- Pages.37-40
- /
- 1999
전하 트랩 형 비휘발성 기억소자를 위한 재산화 산화질화막 게이트 유전악의 특성에 관한 연구
Characteristics of the Reoxidized Oxynitride Gate Dielectric for Charge Trap Type NVSM
초록
For the first time, charge trapping nonvolatile semiconductor memories with the deoxidized oxynitride gate dielectric is proposed and demonstrated. Gate dielectric wit thickness of less than 1 nm have been grown by postnitridation of pregrown thermal silicon oxides in NO ambient and then reoxidation. The nitrogen distribution and chemical state due to NO anneal/reoxidation were investigated by M-SIMS, TOF-SIMS, AES depth profiles. When the NO anneal oxynitride film was reoxidized on the nitride film, the nitrogen at initial oxide interface not only moved toward initial oxide interface, but also diffused through the newly formed tunnel oxide by exchange for oxygen. The results of reoxidized oxynitride(ONO) film analysis exhibits that it is made up of SiO