한국결정성장학회:학술대회논문집 (Proceedings of the Korea Association of Crystal Growth Conference)
- 한국결정성장학회 1999년도 PROCEEDINGS OF 99 INTERNATIONAL CONFERENCE OF THE KACG AND 6TH KOREA·JAPAN EMG SYMPOSIUM (ELECTRONIC MATERIALS GROWTH SYMPOSIUM), HANYANG UNIVERSITY, SEOUL, 06월 09일 JUNE 1999
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- Pages.419-431
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- 1999
Crystal Growth of InP by VGF Method using Auqrtz Ampoule Characterization
- Park, E.S. (Institute of Ceramic Technology) ;
- C.H. Jung (Institute of Ceramic Technology) ;
- J.J. Myung (Institute of Ceramic Technology) ;
- J.Y. Hong (Institute of Ceramic Technology) ;
- Kim, M.K. (Institute of Ceramic Technology)
- 발행 : 1999.06.01
초록
InP, III-V binary compound semiconductor, single crystal was grown by VGF (vertical gradient freeze) method using quartz ampoule and its electrical optical properties were investigated. Phosphorous powders were put in the bottom of quartz ampoule and Indium metal changed in conical quartz crucible hat was attached at the upper side position inside the quartz ampoule. It was vacuous under the pressure of 10-5 Torr and sealed up. In metal in the quartz crucible was melted at 1070
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