IGBT의 콜렉터 구조에 따른 홀 주입효율의 변화

Variations of the hole injection efficiency with IGBT's collector structure

  • 발행 : 1999.07.19

초록

The analysis of hole injection efficiency at the p+/n-drift layer junction in non-punchthrough IGBT structure is presented. This analysis takes into account carrier concentration variations by conductivity modulation. Good agreement between this analysis and simulation is found over a wide range of carrier lifetime and current density. The proposed analytical model of the hole injection efficiency as a function of collector width, collector concentration has been verified by device simulator, ATLAS.

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