대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)
- 대한전기학회 1999년도 하계학술대회 논문집 D
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- Pages.1907-1909
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- 1999
GAIVBE 기법에 의한 GaN 박막의 형성과 그 활용성에 관한 연구
Study on the Growth of GaN Film by GAIVBE Technique and Its Applications
- Kang, Ho-Cheol (Dept. of Electrical Engineering, Korea University) ;
- Kang, Ey-Goo (Dept. of Electrical Engineering, Korea University) ;
- Lee, Jong-Suk (Dept. of Electrical Engineering, Korea University) ;
- Sung, Man-Young (Dept. of Electrical Engineering, Korea University) ;
- Park, Sung-Hee (Dept. of Electronic Engineering, Hoseo University)
- 발행 : 1999.07.19
초록
In this paper, we report a high quality GaN films with high hole concentrations and low resistivities without post growth treatment using a GAIVBE system equipped with a home-made inductively coupled RF plasma source. The room temperature hole concentrations obtained were
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