대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)

대한전기학회 (The Korean Institute of Electrical Engineers)
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결정입계 영향을 줄인 새로운 구조의 다결정 실리콘 모양전지에 관한 연구

A Study on Poly-Si Solar Cell of Novel Structure with the Reduced Effects of Grain Boundaries

  • 임동건 (성균관대학교 전기 전자 및 컴퓨터공학부) ;
  • 이수은 (성균관대학교 전기 전자 및 컴퓨터공학부) ;
  • 박성현 (성균관대학교 전기 전자 및 컴퓨터공학부) ;
  • 이준신 (성균관대학교 전기 전자 및 컴퓨터공학부)
  • Lim, Dong-Gun (School of Electrical and Computer Engineering, Sung Kyun Kwan University) ;
  • Lee, Su-Eun (School of Electrical and Computer Engineering, Sung Kyun Kwan University) ;
  • Park, Sung-Hyun (School of Electrical and Computer Engineering, Sung Kyun Kwan University) ;
  • Yi, Jun-Sin (School of Electrical and Computer Engineering, Sung Kyun Kwan University)
  • 발행 : 1999.07.19
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초록

This paper deals with a novel structure of poly-Si solar cell. A solar cell conversion efficiency was degraded by grain boundary effect in Polycrystalline silicon. To reduce grain boundary effect, we performed a preferential grain boundary etching, $POCl_3$ n-type emitter doping, and then ITO film growth on poly-Si. Among the various preferential etchants, Schimmel etch solution exhibited the best result having grain boundary etch depth about $10{\mu}m$. RF magnetron sputter grown ITO films showed a low resistivity of $10^{-4}\Omega-cm$ and high transmittance of 85%. With well fabricated poly-Si solar cells. we were able to achieve as high as 15% conversion efficiency at the input power of 20mW/$cm^2$.

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