Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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Dielectric and Breakdown Characteristics of MDPE included Semiconductor layer

반도전층을 갖는 MDPE의 운전 및 절연파괴 특성

  • Yoo, Sung-Soo (School of Electrical and Electronic Engineering, Wonkwang University) ;
  • Lee, Jong-Chan (School of Electrical and Electronic Engineering, Wonkwang University) ;
  • Park, Dae-Hee (School of Electrical and Electronic Engineering, Wonkwang University)
  • 유성수 (원광대학교 전기전자공학부) ;
  • 이종찬 (원광대학교 전기전자공학부) ;
  • 박대희 (원광대학교 전기전자공학부)
  • Published : 1999.07.19
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Abstract

In this study, we evaluated the dependence of thickness and temperature in the breakdown strength of MDPE and effect of semiconductor. As the result, breakdown strength trend to decrease according to the increase of thickness and temperature. We obtained the result that the breakdown strength was a little lower in the structure of Semi/MDPE than Semi/MDPE/Semi, but breakdown strength of MDPE was greater both of all. The dependency of permittivity, tan ${\delta}$ and conductance on frequency and temperature were investigated. Both of the specimans showed the trend of decreased in permittivity as the temperature increased but increase as the frequency increased.

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