초록
We formed $SiO_2:F$ films by low-temperature process called Liquid Phase Deposition(LPD) and investigated its electrical and physical properties. Because of the use of room-temperature and no special vacuum apparatus for forming $SiO_2:F$ films, this technique can have some advantages related with the application to dielectric interlayer for multilevel structure in ULSI devices. The growth rate 100nm/hr was obtained at the growth solution of 2.5mol/l. The P-etch rate showed a similar or better tendency compared with $SiO_2$ films formed by CVD, Sputter, E-beam evaporator etc.. The fourier transform infrared (FTIR) spectra revealed that the contained fluorine atoms exist uniform throughout the formed $SiO_2$ films. The Scanning Electron Microscope images showed that LPD-$SiO_2$ films could be stably grown on silicon substrates and the good step-coverage could also be obtained, which indicates that the LPD-$SiO_2$ films have some possibility of the application to planarization and interlayer dielectric films which are vitally necessary to achieve the multilevel interconnection in ULSI. The I-V characteristics has some distinct differences according to the concentration of growth solution.