Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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An Improved Gate Control Scheme of Series Connected IGBTs

IGBT 직렬 연결을 위한 게이트 구동기법

  • Kim, Wan-Jung (Dept. of Electrical Engineering, Hanyang University) ;
  • Choi, Chang-Ho (Dept. of Electrical Engineering, Hanyang University) ;
  • Hyun, Dong-Seok (Dept. of Electrical Engineering, Hanyang University)
  • 김완중 (한양대학교 전기공학과) ;
  • 최창호 (한양대학교 전기공학과) ;
  • 현동석 (한양대학교 전기공학과)
  • Published : 1998.11.28
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Abstract

The large scale industry needs high voltage converters. Therefore series connection of power semiconductor devices is necessary. It is important to prevent a device induced the overvoltage above ratings by proper voltage balancing in the field of IGBT series connection. In addition, the overvoltage induced by a stray inductance has to be limited in the high power circuit. This paper proposes a new gate control scheme which can balance the voltage properly and limit the overshoot by control the slope of collector voltage under series connected IGBT turn-off transient. The propose gate control scheme limits the overvoltage by sensing the collector voltage and controlling the gate signal actively. The new series connected IGBT gate driver is made and its validity is verified by the experimental results for series connected IGBT circuit.

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