대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)
- 대한전기학회 1998년도 추계학술대회 논문집 학회본부 C
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- Pages.1014-1016
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- 1998
다공질 실리콘층을 이용한 정전용량형 습도센서의 개발
Development of Capacitance-type Humidity Sensors Using Porous Silicon Layer
- Kim, Seong-Jeen (Sch. of Electrical and Electronics Eng., Kyungnam University) ;
- Lee, Ju-Hyuk (Sch. of Electrical and Electronics Eng., Kyungnam University) ;
- Yoon, Yeo-Kyung (Sch. of Electrical and Electronics Eng., Kyungnam University) ;
- Choi, Bok-Gil (Dpt. of Electrical Eng., Kongju National University)
- 발행 : 1998.11.28
초록
A capacitance-type humidity sensor using porous silicon layer is developed. The unique property of this sensor is a structure which has electrodes on the surface of the wafer like a general IC device. To do this. the sensor was fabricated using process such as localized formation of porous silicon, oxidation of porous silicon layer, and etching of oxidized porous silicon layer. The measurement of humidity-sensing ability was done for two type of sensors using porous silicon layer formed in 25 and 35% HF solutions, respectively. As the result, the former sensors showed larger value and variation of capacitance for the relative humidity.
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