대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)

대한전기학회 (The Korean Institute of Electrical Engineers)
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ICP 방법으로 증착한 SiC 박막의 성장 및 특성 고찰

Characteristics of SiC thin films deposited by ICP-CVD

  • 김동진 (명지대학교 공과대학 전기공학과) ;
  • 길태현 (명지대학교 공과대학 전기공학과) ;
  • 황성수 (명지대학교 공과대학 전기공학과) ;
  • 김용상 (명지대학교 공과대학 전기공학과)
  • Kim, D.J. (Dept. of Electrical Engineering, Myongji University) ;
  • Kil, T.H. (Dept. of Electrical Engineering, Myongji University) ;
  • Hwang, S.S. (Dept. of Electrical Engineering, Myongji University) ;
  • Kim, Y.S. (Dept. of Electrical Engineering, Myongji University)
  • 발행 : 1998.11.28
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초록

SiC thin film have been prepared by ICP-CVD for low temperature deposition and large area deposition. The structural properties of deposited SiC films are characterized by employing SEM, FT-IR, XRD, XPS and Raman Spectroscopy. From the experimetal results, good crystallinity has been achieved in $1000^{\circ}C$ grown SiC film which have carbonization step at $1100^{\circ}C$ for substrate bias of 30V.

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