Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 1998.11c
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- Pages.850-852
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- 1998
Characteristics of SiC thin films deposited by ICP-CVD
ICP 방법으로 증착한 SiC 박막의 성장 및 특성 고찰
- Kim, D.J. (Dept. of Electrical Engineering, Myongji University) ;
- Kil, T.H. (Dept. of Electrical Engineering, Myongji University) ;
- Hwang, S.S. (Dept. of Electrical Engineering, Myongji University) ;
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Kim, Y.S.
(Dept. of Electrical Engineering, Myongji University)
- Published : 1998.11.28
Abstract
SiC thin film have been prepared by ICP-CVD for low temperature deposition and large area deposition. The structural properties of deposited SiC films are characterized by employing SEM, FT-IR, XRD, XPS and Raman Spectroscopy. From the experimetal results, good crystallinity has been achieved in
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