Effects of passivation layer on the thermal deformation behavior of metal film used in semiconductor devices

반도체용 박막재료의 열응력-변형 특성에 미치는 passivation 층의 영향 분석

  • Choi, Ho-Seong (School of Materials Science and Engineering, Seoul National University) ;
  • Lee, Kwang-Ryol (Division of Ceramic, Korea Institute of Science and Technology) ;
  • Kwon, Dong-Il (School of Materials Science and Engineering, Seoul National University)
  • 최호성 (서울대학교 공과대학 재료공학부) ;
  • 이광렬 (한국과학기술연구원 세라믹스연구부) ;
  • 권동일 (서울대학교 공과대학 재료공학부)
  • Published : 1998.11.28

Abstract

Metal thin films such as aluminum have been used as interconnects in semiconductor device. Recently, these materials are applied to structural materials in microsensors and microactuators. In this study, we evaluate deformation and strength behavior of aluminum alloy film. Three layer model for thermal deformation of multilayered thin film material is introduced and applied to Si/Al(1%Si)/$SiO_2$ system. Based on beam bending theory and concept of bending strain. elastic and elastic/plastic thermal deformation behaviors of multilayered materials can be estimated. In the case of plastic deformation of ductile layer, strain rate equations based on deformation mechanism map are employed for describe the stress relaxation effect. To experimentally examine deformation of multilayered thin film materials, in-situ laser scanning method is used to measure curvature of specimens during heating and cooling. The thickness of $SiO_2$ layer is varied to estimate third-layer effect of thermal deformation of metal films, and its effect on deformation behavior are discussed.

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