Proceedings of the KOSOMBE Conference (대한의용생체공학회:학술대회논문집)
- Volume 1998 Issue 11
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- Pages.147-148
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- 1998
Fabrication of Depth-probe type Silicon Microelectrode array for Neural signal Recording
신경신호기록용 탐침형 반도체 미세전극 어레이의 제작
- Yoon, T.H. (School of Electrical Engineering, Seoul National University) ;
- Hwang, E.J. (School of Electrical Engineering, Seoul National University) ;
- Shin, D.Y. (School of Electrical Engineering, Seoul National University) ;
- Kim, S.J. (School of Electrical Engineering, Seoul National University)
- Published : 1998.11.20
Abstract
In this paper, we developed the process for depth-probe type silicon microelectrode arrays. The process consists of four mask steps only. The steps are for defining sites, windows, and for shaping probe using plasma etch from above, and for shaping using wet etch from below, respectively. The probe thickness is controlled by dry etching, not by impurity diffusion. We used gold electrodes with a triple dielectric system consisting of oxide/nitride/oxide. The shank of the probe taper from 200um to tens of urn tip and has 30 um thickness.
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