제작 조건에 따른 Se박막의 결정구조 및 표면형상에 관한 연구

A Study on Crystal Structure and Surface Morphology of Se Thin Film by Fabrication Condition

  • 박계춘 (목포대학교 전기공학과) ;
  • 임영삼 (전남대학교 전기공학과) ;
  • 정해덕 (전남대학교 전기공학과) ;
  • 이진 (전남대학교 전기공학과) ;
  • 정인성 (전남대학교 전기공학과) ;
  • 김종욱 (전남대학교 전기공학과) ;
  • 구할본 (전남대학교 전기공학과)
  • 발행 : 1998.11.01

초록

Crystal structure and surface morphology of Se thin film fabricated by EBE method had been studied. Se thin film was deposited with amorphous structure until substrate temperature of l00$^{\circ}C$. But Se thin film was grown with monoclinic structure at substrate temperature af over 150$^{\circ}C$, and its lattice constant of a, b and c was 12.76${\AA}$, 9.15${\AA}$ and 10.41${\AA}$ respectively. Also, after heat-treatment at 150。 for 15 min with substrate temperature of l00。, amorphous Se was proved to be hexagonal structure, and its lattice constant of a and c was 4.27${\AA}$ and 4.83${\AA}$ respectively.

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