한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 1998년도 추계학술대회 논문집
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- Pages.151-154
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- 1998
Pd/Ge/Pd/Ti/Au-InGaAs 오믹접촉의 급속 열처리 의존성
RTA Dependence of Pd/Ge/Pd/Ti/Au-InGaAs Ohmic Contact
초록
We have investigated a correlation of the electrical properties of the Pd/Ge/Pd/Ti/Au ohmic contact on n-InGaAs with its microstructures for the high temperature application of compound semiconductor devices. The samples were heat-treated by the rapid thermal annealing at various temperatures. In the contact system, moderately good specific contact resistance was obtained even before annealing because of the low metals-InGaAs barrier height, and better ohmic performances were observed by annealing up to 400˚C. But the ohmic performance was degraded after annealing at 450˚C due to the increment of Pd
키워드